2SK1958 |
RFQ for 2SK1958 |
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| Product | Manufacturers | Pack | D/C |
| 2SK1958 | - | SOT323 | 05+ |
Features |
| • Gate can be driven by 1.5 V• Because of its high input impedance, there's no need to consider drive current• Since bias resistance can be omitted, the number of components required can be reduced |
|
Parameter |
Symbol |
Conditions |
Ratings |
Unit |
| Drain-to-Source Voltage |
VDSS |
VGS = 0 |
16 |
V |
| Gate-to-Source Voltage |
VGSS |
VDS = 0 |
±7.0 |
V |
| Drain Current (DC) |
ID |
±0.1 |
A | |
| Drain Current (pulse) |
IDP |
PW10s, duty cycle50% |
±0.2 |
A |
| Total Power Dissipation |
PT |
150 |
mW | |
| Channel Temperature |
Tch |
150 |
||
| Storage temperature |
Tstg |
55 to +150 |